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1 - 12 of 176 Products for 'Crystal Growth' Page 1 of 15 |

Crystal Growth

32311a coverSinglesRR.indd

32311a coverSinglesRR.indd

…proprietary manufacturing techniques are utilized in a number of our product lines including our gas laser production, crystal growth, beam alignment as well as the wafer growth for our semiconductor and optically pumped semiconductor laser product family. Raw materials or sub-components required…

Company

…remains a cornerstone of our business. As such, we design and produce many of our own components and sub-assemblies – including fibers, crystal and wafer growth. We also design and implement proprietary manufacturing tools, equipment and techniques that are utilized across our product lines ensuring…

Microelectronics

Microelectronics

…Products Paladin Advanced 355 Paladin Advanced 532 Paladin Compact 355 Related Product Families Laser Tools and Systems Laser Crystallization for LTPS Laser crystallization drives faster, brighter displays with HD resolution. Excimer laser powers in excess of 1 kW and high precision UV optical…

Highlights No. 59-4.1.02.QXP

Highlights No. 59-4.1.02.QXP

…with crystal growth from the edges of the melted area. When the liquid phase temperature falls below melting temperature, the crystal growth from the liquid/solid interface starts before the spontaneous nucleation appears. The spontaneous nucleation initiates the growth of crystals statistically…

CrystaLas brochureRevA.qxd

CrystaLas brochureRevA.qxd

…scanned chevron pattern exposure yields a single-crystal like region. of 2.5 m wide with well-defined edges. Crystal growth at the solid/liquid interface appears and leads to a crystal length of 1-1.5 m. The second exposure, half of the grating period shifted, melts the unprocessed area and produces…

CrystaLas brochureRevA.qxd

CrystaLas brochureRevA.qxd

…scanned chevron pattern exposure yields a single-crystal like region. of 2.5 m wide with well-defined edges. Crystal growth at the solid/liquid interface appears and leads to a crystal length of 1-1.5 m. The second exposure, half of the grating period shifted, melts the unprocessed area and produces…

Microsoft Word - Produktronik Article rev1.doc

Microsoft Word - Produktronik Article rev1.doc

…absorbs 308 nm radiation making it possible to achieve near complete melt with each individual pulse. This leads to efficient crystal formation due to crystal growth in the vertical direction, starting at the interface between the molten and residual un-molten silicon. ELA requires an excimer…

OnBoardTechnology Excimer.pdf

OnBoardTechnology Excimer.pdf

…a final homogeneity of 2.5 % (2) to allow 10 to 20 irradiations of each Figure 2 - Structural and electronic transport properties of silicon phases Figure 3 - Sketch of the ELA technique Figure 4 - Stochastic vertical crystal growth mechanism (left) and typical crystal grain pattern with ELA (right)

NdYVO4 DS.pdf

NdYVO4 DS.pdf

…effects. The crystals short fluorescence lifetime is an advantage for high-repetition rate Q-switched operation. Growth and Manufacturing Capabilities Coherent's Vanadate crystal boules are grown at our state-of-the-art 30,000 sq. ft. crystal manufacturing facility in the USA. The growth methods…

Nd-YVO4-Data-Sheet.pdf

Nd-YVO4-Data-Sheet.pdf

…effects. The crystals short fluorescence lifetime is an advantage for high-repetition rate Q-switched operation. Growth and Manufacturing Capabilities Coherent's Vanadate crystal boules are grown at our state-of-the-art 30,000 sq. ft. crystal manufacturing facility in the USA. The growth methods…

Microsoft Word - LTPS white paper final Oct26.doc

Microsoft Word - LTPS white paper final Oct26.doc

…complete melt with each individual pulse, as shown in Figure 1. At the microscopic level the near complete melt leads to efficient crystal formation due to crystal growth in the vertical direction, starting at the interface between the molten and unmolten silicon. There are several factors that…

OnBoardTechnology Excimer.pdf

OnBoardTechnology Excimer.pdf

…thermally unaffected and below its strain temperature. At the microscopic level the near complete melt leads to efficient crystal formation due to random crystal growth in the vertical direction, starting at the interface between molten and solid silicon. There are several factors that determine…

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