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Crystal Growth

32311a coverSinglesRR.indd

32311a coverSinglesRR.indd

…proprietary manufacturing techniques are utilized in a number of our product lines including our gas laser production, crystal growth, beam alignment as well as the wafer growth for our semiconductor and optically pumped semiconductor laser product family. Raw materials or sub-components required…

32311a coverSinglesRR.indd

32311a coverSinglesRR.indd

…proprietary manufacturing techniques are utilized in a number of our product lines including our gas laser production, crystal growth, beam alignment as well as the wafer growth for our semiconductor and optically pumped semiconductor laser product family. Raw materials or sub-components required…

LineBeam

LineBeam

LineBeam System for excimer laser crystallization annealing applications. LineBeam for Excimer Laser Annealing (ELA) of typically 50 nm to 120 nm thick amorphous silicon films on large flat panel display glass substrates was transferred into industrial production in the mid-1990s. This technique is…

32311a coverSinglesRR.indd

32311a coverSinglesRR.indd

…proprietary manufacturing techniques are utilized in a number of our product lines including our gas laser production, crystal growth, beam alignment as well as the wafer growth for our semiconductor and optically pumped semiconductor laser product family. Raw materials or sub-components required…

34706a cover.indd

34706a cover.indd

…proprietary manufacturing techniques are utilized in a number of our product lines including our gas laser production, crystal growth, beam alignment as well as the wafer growth for our semiconductor and optically pumped semiconductor laser product family. Raw materials or sub-components required…

34706a cover.indd

34706a cover.indd

…proprietary manufacturing techniques are utilized in a number of our product lines including our gas laser production, crystal growth, beam alignment as well as the wafer growth for our semiconductor and optically pumped semiconductor laser product family. Raw materials or sub-components required…

Lasers-Enable-Smartphone-Manufacturing.pdf

Lasers-Enable-Smartphone-Manufacturing.pdf

…absorbs 308 nm radiation making it possible to achieve near complete melt with each individual pulse. This leads to efficient crystal formation due to crystal growth in the vertical direction, starting at the interface between the molten and residual unmolten silicon. ELA requires an excimer…

Lasers-Enable-Smartphone-Manufacturing.pdf

Lasers-Enable-Smartphone-Manufacturing.pdf

…absorbs 308 nm radiation making it possible to achieve near complete melt with each individual pulse. This leads to efficient crystal formation due to crystal growth in the vertical direction, starting at the interface between the molten and residual unmolten silicon. ELA requires an excimer…

Lasers-Enable-Smartphone-Manufacturing.pdf

Lasers-Enable-Smartphone-Manufacturing.pdf

…absorbs 308 nm radiation making it possible to achieve near complete melt with each individual pulse. This leads to efficient crystal formation due to crystal growth in the vertical direction, starting at the interface between the molten and residual unmolten silicon. ELA requires an excimer…

Lasers-Enable-Smartphone-Manufacturing.pdf

Lasers-Enable-Smartphone-Manufacturing.pdf

…absorbs 308 nm radiation making it possible to achieve near complete melt with each individual pulse. This leads to efficient crystal formation due to crystal growth in the vertical direction, starting at the interface between the molten and residual unmolten silicon. ELA requires an excimer…

Lasers-Enable-Smartphone-Manufacturing.pdf

Lasers-Enable-Smartphone-Manufacturing.pdf

…absorbs 308 nm radiation making it possible to achieve near complete melt with each individual pulse. This leads to efficient crystal formation due to crystal growth in the vertical direction, starting at the interface between the molten and residual unmolten silicon. ELA requires an excimer…

Lasers-Enable-Smartphone-Manufacturing.pdf

Lasers-Enable-Smartphone-Manufacturing.pdf

…absorbs 308 nm radiation making it possible to achieve near complete melt with each individual pulse. This leads to efficient crystal formation due to crystal growth in the vertical direction, starting at the interface between the molten and residual unmolten silicon. ELA requires an excimer…

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