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Related Categories: Unmounted Laser Diode Bars

Epitaxial

CCPs-1430-1470nm-Data-Sheet.pdf

CCPs-1430-1470nm-Data-Sheet.pdf

Superior Reliability & Performance Conduction-Cooled Bar Packages, 1430-1470 nm Features: · High efficiency InP epitaxial technology · 35W from a 20% fill factor bar · Low smile options available · ROHS compliant Conduction-Cooled Bar Packages, 1430-1470 nm Applications: · Medical · Aesthetics ·…

UMBs-1430-1470nm-Data-Sheet.pdf

UMBs-1430-1470nm-Data-Sheet.pdf

Superior Reliability & Performance Unmounted Diode Laser Bars, 1430-1470 nm Features: · High efficiency InP epitaxial technology · 35W from a 20% fill factor bar · Custom configurations available Unmounted Diode Laser Bars, 1430-1470 nm Applications: · Medical · Aesthetics · Illumination ·…

COHR UMCs 780-830nm DS 0517 1.pdf

COHR UMCs 780-830nm DS 0517 1.pdf

780 nm to 830 nm Based on Coherent's legendary Aluminum-free Active Area (AAATM) epitaxy, Coherent 780-830 nm devices provide unsurpassed reliability and performance. Standard options include 3.5W 100 µm and 7W 200 µm wide emitters. Specifications and options--including power, wavelength, and…

SingleEmitters-780-830nm-Data-Sheet.pdf

SingleEmitters-780-830nm-Data-Sheet.pdf

Superior Reliability & Performance Single Emitter Diode Lasers, 780-830 nm Features: · Unique AAA epitaxial technology for highest reliability and lifetime · 7W from a 200 µm wide emitter · 5W from a 150 µm wide emitter · 3.2W from a 90 µm wide emitter · Lifetime >20,000 hours · ROHS compliant…

COHR UMBs 780-830nm DS 0216revA 2.pdf

COHR UMBs 780-830nm DS 0216revA 2.pdf

Superior Reliability & Performance Unmounted Diode Laser Bars, 780-830 nm Features: · Unique AAA epitaxial technology for highest reliability and lifetime · Powers up to 100W CW and 500W QCW · TM and TE polarization options · High efficiency · Wide variety of bar configurations (emitter width,…

ILS Annealing.PDF

…(electron mobility of ~50-250 cm2/Vs) the
extremes of the other two forms.
The silicon substrates used for ICs are created through epitaxial growth to yield a virtually defect-free, single-crystal silicon boule. This boule is then physically cut to produce individual wafers for subsequent…

CCP 870-990 DS

CCP 870-990 DS

…#4-40 Shorting Screw Anode Top View Front View Side View 870-890 nm CCP Conduction-Cooled Single Bar Package Features · Coherent high performance epitaxy and packaging technology for high reliability and lifetime (>20,000 hours) · High electrical-to-optical efficiency for reduced electrical demand…

SPIE DSS 2013 Final submitted 4-25-2013x

SPIE DSS 2013 Final submitted 4-25-2013x

…contribute to the final product performance must be carefully engineered starting at the diode device design, and continuing through epitaxy design, epitaxy growth, wafer processing, facet coating, soldering, heat sink design, and final packaging. To achieve a narrow output spectrum as mentioned…

Microsoft Word - PW09 7198-38 Leisher Copyright.doc

Microsoft Word - PW09 7198-38 Leisher Copyright.doc

…locking methods, it is still well-suited
for pumping the 885 nm Nd:YAG absorption feature. More recently, making use of a higher-efficiency epitaxy design
[7], a VHG-locked 7-bar stack operating cw at 25°C was demonstrated, producing >680W of power at 54% conversion
efficiency and…

Laser Focus World - January 2015

Laser Focus World - January 2015

…imaging (MRI). "All aspects of diode-laser technology were challenged here," says Patterson. The challenges included development of the basic epitaxy design of the diode laser, advances in With their high-power density, high efficiency, and long life, laser-diode arrays are the essential light…

Photonics Spectra - July 2017

Photonics Spectra - July 2017

…University
of Toronto and co-author of the paper
"Continuous-wave lasing in colloidal
quantum dot solids enabled by facetselective epitaxy."
Creating cadmium selenide quantum
dot cores just less than three nanometers
in diameter would lead to yellow-green
emission…