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Gan Llo

LLO WavelengthAdvantage.pdf

LLO WavelengthAdvantage.pdf

…microelectronics Schematic layout of a line beam optical system for wafer LLO 308 nm LLO removal of 70 µm thin silicon wafer from glass carrier GaN surface after 248 nm LLO of sapphire Illustration of the UV wavelength advantage in LLO Microelectronics Application Substrate Size PRF Field size #…

CMM 11.5.indd

CMM 11.5.indd

…The energy density that is required
to initiate the launch of a microLED is only a fraction of the fluence
needed to decompose the GaN for
LLO sapphire removal. This means
that large beam dimensions and
thus very high process speeds can
be achieved. In fact, employing…

Microsoft Word - Coherent Whitepaper - Laser Processing of µLED

Microsoft Word - Coherent Whitepaper - Laser Processing of µLED


MQW
Figure 2: Schematic of a LLO process for the delamination of GaN film from sapphire wafer.
The LEDs are processed on the sapphire growth substrate to the level that a temporary or
final carrier substrate is attached. In the subsequent LLO process, the LED wafer is exposed to…

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