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1.    60390-345e-LFW Best match in this PDF  |  All matches in this PDF ... III-V semiconductor chip contains layers of tertiary indium gallium arsenide (InGaAs) quantum wells alternated between binary gallium arsenide (GaAs) layers. The binary layers are optimized to efficiently absorb pump radiation, resulting in a high population of charge carriers. OPS technology is finding ... Related Searches: vcsel | brf | 473 nm | birefringent filter

2.    bigBlueLaserFeb2003Rev2 ... processes. An expensive and potentially unreliable crystal is not needed, as is the case with green YAG lasers. The OPSL chip is based on GaAs semiconductors grown by molecular beam epitaxy, a process known for producing consistent wafers inexpensively and in high volume. The semiconductor chip incorporates ... Related Searches: laser television | opsl | blue laser

3.    Semi_LasersTargetChipFabricationRev2  (PAGE 2 OF 3) ... of the laser scribe. The LED market is lending further momentum to laser scribing applications. LEDs are grown on high-cost substrates, such as GaAs, sapphire, GaP and SiC, that only grow in value following epitaxy. High-precision saws still dice these devices based on SiC, but blue emitters grown on ...

4.    Semi_LasersTargetChipFabricationRev2 Best match in this PDF  |  All matches in this PDF ... of the laser scribe. The LED market is lending further momentum to laser scribing applications. LEDs are grown on high-cost substrates, such as GaAs, sapphire, GaP and SiC, that only grow in value following epitaxy. High-precision saws still dice these devices based on SiC, but blue emitters grown on ... Related Searches: scribing | laser scribing | avia 355

5.    Laser_Magazin0408EntertainmentTaipan Best match in this PDF  |  All matches in this PDF ... äche des OPSL-Chips abgebildet. Dieser monolithische III-V Halbleiterchip enthält Schichten von tertiärem »quantum wells« (InGaAs) und binärem GaAs. Diese binären Schichten sind optimiert in Bezug auf die effiziente Absorption der Pumpstrahlung, was in einer hohen Population von Ladungsträgern resultiert ... Related Searches: taipan | opsl | venom taipan | argon krypton

6.    Excimer_laser_for_advanced_Wafer_Marking2008 Best match in this PDF  |  All matches in this PDF ... lead to functional damage or to a higher failure rate for the integrated circuit. Wafer materials like Si or special wafer materials, like Sapphire, GaAs, Ge, SiC and other 3/5 materials have to be marked with a special light preventing microcracks. For this reason an excimer laser at 193 nm is the ... Related Searches: wafer

7.    ComparisonExcimerLaserSolidStateLaserRev2 Best match in this PDF  |  All matches in this PDF Comparison Excimer Laser - Solid State Laser Rainer Paetzel Lambda Physik AG Goettingen, Germany Abstract Both, excimer and solid state lasers can produce intense ultraviolet light pulses as they are required in a wide range of applications in materials processing and micro-fabrication. Excimer lasers ... Related Searches: copper layer plate | excimer laser | excimer narrowing | line narrow excimer

8.    60390-345e-LFW  (PAGE 1 OF 3) ... III-V semiconductor chip contains layers of tertiary indium gallium arsenide (InGaAs) quantum wells alternated between binary gallium arsenide (GaAs) layers. The binary layers are optimized to efficiently absorb pump radiation, resulting in a high population of charge carriers. OPS technology is finding ... Related Searches: 473 nm

9.    Intrinsic_Birefringence_2 Best match in this PDF  |  All matches in this PDF ... in CaF2 and BaF2 for wavelengths in the range 365 nm to 156 nm, and ab initio optical response calculations in these materials and Si, Ge, GaAs, and GaP. Calculations typically agree within 40%. For 110 propagation, where the effect is largest, our measurements for CaF2 BaF2 give n 1¯10 n 001 ( 11.8 ... Related Searches: znse lens | znse windows | cube

10.    Schulze_Umbruch21Rev2 Best match in this PDF  |  All matches in this PDF ... scheme hergestell, ein Verfahren, das für konsistente WaferHerstellung gut bekannt ist. Die Materialbasis ist die bewährte Galliumarsenid- (GaAs-) Technologie. Über seine Funktion als Lasermedium hinaus dient der OPS Chip auch als einer der Endspiegel des linearen Resonators: Er ist als Bragg-Spiegel ... Related Searches: 488 nm | sapphire 488-20 | matthias schulze | 980nm laser diode

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