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j-10ge-le

COHERENT LMC 2016-2017 Catalog .pdf

COHERENT LMC 2016-2017 Catalog .pdf

…Model Name Index DB-25 Energy Sensors USB/RS Energy Sensors DB-25 Power Sensors USB/RS Power Sensors Device Specifications Model J-10SI-HE J-10Ge-LE Energy Range 750 pJ to 775 nJ (at 532 nm) 1 nJ to 600 nJ (at 1064 nm) Noise Equivalent Energy (pJ) 4 mm at energies above 200 nJ to avoid saturation.

Book.book

Book.book

…accurate when used at wavelengths other than the calibration wavelength. Table 10. Quantum EnergyMax Sensor Specifications J-10SI-LE J-10SI-HE J-10GE-LE Energy Range 20 pJ to 40 nJ (@ 532 nm) 200 pJ to 400 nJ (@ 532 nm) 200 pJ to 400 nJ (@ 1064 nm) Noise Equivalent Energy < 1 pJ (@ 532 nm) < 1 pJ…

Book.book

Book.book

…± 2% 1064 nmAll High Rep. Rate sensors (Diffuse metallic coating) ± 3% J-50MB-YAG ± 2% J-50MB-IR ± 3% 1064, 2940 nm J-25MB-IR ± 4% 1064 nm J-25MUV-193 ± 3% 193 nm J-25MUV-248 ± 3% 248 nm J-50MUV-193 ± 4% 193 nm J-50MUV-248 ± 4% 248 nm J-10SI-LE ± 5% 532 nm J-10SI-HE ± 5% J-10GE-LE ± 5% 1064 nm

Book.book

Book.book

…accurate when used at wavelengths other than the calibration wavelength. Table 10. Quantum EnergyMax Sensor Specifications J-10SI-LE J-10SI-HE J-10GE-LE Energy Range 20 pJ to 40 nJ (@ 532 nm) 200 pJ to 400 nJ (@ 532 nm) 200 pJ to 400 nJ (@ 1064 nm) Noise Equivalent Energy < 1 pJ (@ 532 nm) < 1 pJ…

COHERENT LMC 2016-2017 Catalog .pdf

COHERENT LMC 2016-2017 Catalog .pdf

…Model Name Index DB-25 Energy Sensors USB/RS Energy Sensors DB-25 Power Sensors USB/RS Power Sensors Device Specifications Model J-10SI-HE J-10Ge-LE Energy Range 750 pJ to 775 nJ (at 532 nm) 1 nJ to 600 nJ (at 1064 nm) Noise Equivalent Energy (pJ) 4 mm at energies above 200 nJ to avoid saturation.

Book.book

Book.book

…very low pulse energy measurement down to 20 pJ. Two of the models (J-10SI-LE and J-10SI-HE) incorporate a Silicon photodiode, and one model (J-10GE-LE) incorporates a Germanium photodiode. All three models contain large 10 mm clear apertures and operate at repetition rates from single pulse up…

Book.book

Book.book

…very low pulse energy measurement down to 20 pJ. Two of the models (J-10SI-LE and J-10SI-HE) incorporate a Silicon photodiode, and one model (J-10GE-LE) incorporates a Germanium photodiode. All three models contain large 10 mm clear apertures and operate at repetition rates from single pulse up…

Book.book

Book.book

…very low pulse energy measurement down to 20 pJ. Two of the models (J-10SI-LE and J-10SI-HE) incorporate a Silicon photodiode, and one model (J-10GE-LE) incorporates a Germanium photodiode. All three models contain large 10 mm clear apertures and operate at repetition rates from single pulse up…

Book.book

Book.book

…very low pulse energy measurement down to 20 pJ. Two of the models (J-10SI-LE and J-10SI-HE) incorporate a Silicon photodiode, and one model (J-10GE-LE) incorporates a Germanium photodiode. All three models contain large 10 mm clear apertures and operate at repetition rates from single pulse up…

Book.book

Book.book

…± 2% 1064 nmAll High Rep. Rate sensors (Diffuse metallic coating) ± 3% J-50MB-YAG ± 2% J-50MB-IR ± 3% 1064, 2940 nm J-25MB-IR ± 4% 1064 nm J-25MUV-193 ± 3% 193 nm J-25MUV-248 ± 3% 248 nm J-50MUV-193 ± 4% 193 nm J-50MUV-248 ± 4% 248 nm J-10SI-LE ± 5% 532 nm J-10SI-HE ± 5% J-10GE-LE ± 5% 1064 nm

Book.book

Book.book

…± 2% 1064 nmAll High Rep. Rate sensors (Diffuse metallic coating) ± 3% J-50MB-YAG ± 2% J-50MB-IR ± 3% 1064, 2940 nm J-25MB-IR ± 4% 1064 nm J-25MUV-193 ± 3% 193 nm J-25MUV-248 ± 3% 248 nm J-50MUV-193 ± 4% 193 nm J-50MUV-248 ± 4% 248 nm J-10SI-LE ± 5% 532 nm J-10SI-HE ± 5% J-10GE-LE ± 5% 1064 nm

Book.book

Book.book

…± 2% 1064 nmAll High Rep. Rate sensors (Diffuse metallic coating) ± 3% J-50MB-YAG ± 2% J-50MB-IR ± 3% 1064, 2940 nm J-25MB-IR ± 4% 1064 nm J-25MUV-193 ± 3% 193 nm J-25MUV-248 ± 3% 248 nm J-50MUV-193 ± 4% 193 nm J-50MUV-248 ± 4% 248 nm J-10SI-LE ± 5% 532 nm J-10SI-HE ± 5% J-10GE-LE ± 5% 1064 nm

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